SPN6435 mosfet equivalent, dual n-channel mosfet.
* 40V/0.30A , RDS(ON)=4.0Ω@VGS=10V
* 40V/0.20A , RDS(ON)=5.0Ω@VGS=5.0V
* 40V/0.02A , RDS(ON)=10.0Ω@VGS=2.5V
* Super high density cell design for extremely.
requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low volt.
The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching per.
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